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| B12-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The B12-28 is Designed for Class C Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380" 4L STUD .112x45 A B C E E B H I J FEATURES: * PG = 13 dB Typical at 12 W/175 MHz * Load VSWR at Rated Conditions * OmnigoldTM Metallization System D OC #8-32 UNC-2A F E G MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC O O 3.0 A 60 V 27 W @ TC = 25 C -55 C to +200 C -55 C to +150 C 6.5 C/W O O O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10801 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Cob PG c TC = 25 C O TEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 28 V POUT = 12 W IC = 500 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL 60 35 4.0 MAXIM UNITS V V V 250 20 200 30 10.8 50 13 60 A --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV.A 1/1 |
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